spic
英 [spɪk]
美 [spɪk]
n. 西班牙语区的人(如墨西哥人或波多黎各人，有强烈冒犯意)
复数：spics
COCA.34384
习惯用语
n.
- spic and spanspic and span
牛津词典
noun
- 西班牙语区的人（如墨西哥人或波多黎各人，有强烈冒犯意）
a very offensive word for a person from a country where Spanish is spoken, for example a Mexican or Puerto Rican
英英释义
noun
adj
- completely neat and clean
- the apartment was immaculate
- in her immaculate white uniform
- a spick-and-span kitchen
- their spic red-visored caps
双语例句
- As a practical junction termination techonology, field plate ( FP) has been widely used in power MOSFET, HVIC and SPIC with the merits of small occupied area, simple manufacturing process and so on.
场板技术作为一种实用的结终端技术，因其所占面积小、制造工艺简单等优点，在功率MOS器件、高压集成电路和智能功率集成电路中得到了广泛的应用。 - A novel current-control-mode relaxation oscillator for SPIC is presented.
提出了一种用于单片开关电源的新型电流控制模式弛张振荡器。 - Felt-based carbon/ carbon ( C/ C) composites were prepared by a super high pressure impregnation and carbonization process ( SPIC) and graphitization at high temperatures.
用超高压液相浸渍和碳化，经石墨化处理制备了毡基碳／碳复合材料。 - The analysis shows that the SPIC can take good compromise between complexity and performance and it has the further research value.
分析表明：这种检测器能够利用串并行结合的优点进行多用户检测，并能够在复杂度和性能上得到很好的折衷，具有进一步研究的价值。 - Research on Design Methodology of SPIC
SPIC设计方法与IP设计技术研究 - This one little spic is getting his clock cleaned by another one.
小西班牙佬被扁得倒在地上。 - Recently, the smart power management system has attracted more attentions due to the development of SoC ( System on a Chip) and Power SoC technology and it has made further progress with SPIC ( smart power IC) design.
近年来系统集成芯片和功率系统集成技术的发展更是对智能电源系统的开发提出了迫切的需求，从而进一步促进了对智能功率芯片设计技术的研究。 - This spic cop doesn't take American express.
这个美籍西班牙人警察不用美国的快递服务。 - With the development of power integrated circuits ( PIC) and semiconductor process, the demand for smart power integrated circuit ( SPIC) is more and more widely in modern society.
随着功率集成电路的发展和半导体工艺的成熟，现代社会对智能功率集成电路的需求越来越广泛。 - High voltage SOI lateral MOS devices studied in this paper are early application work for SOI SPIC. The breakdown mechanism of SOI LDMOS with located charge trenches was analyzed in this thesis.
本课题进行高压SOI横向MOS器件的研究，是SOISPIC研究的先期应用性工作，将为今后进行SOISPIC的研究提供基础。